InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy

Published:2020-06-08 Issue:8 Volume:14 Page:2000173
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Sala Elisa Maddalena¹^ORCID,Na Young In²,Godsland Max²,Trapalis Aristotelis¹,Heffernan Jon¹

Affiliation:

1. EPSRC National Epitaxy FacilityDepartment of Electronic and Electrical EngineeringThe University of Sheffield North Campus Broad Lane Sheffield S37HQ UK

2. Department of Electronic and Electrical EngineeringThe University of Sheffield North Campus Broad Lane Sheffield S37HQ UK

Funder

Innovate UK

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000173

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5. 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier

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