Aging in Ferroelectric Si‐Doped Hafnium Oxide Thin Films-Reference-Cited by-同舟云学术

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Aging in Ferroelectric Si‐Doped Hafnium Oxide Thin Films

Published:2021-05 Issue:5 Volume:15 Page:2100023
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Mart Clemens¹²^ORCID,Kohlenbach Nico-Dominik¹,Kühnel Kati¹,Eßlinger Sophia¹,Czernohorsky Malte¹,Ali Tarek¹²,Weinreich Wenke¹,Eng Lukas M.²³

Affiliation:

1. Center Nanoelectronic Technologies (CNT) Fraunhofer Institute for Photonic Microsystems 01099 Dresden Germany

2. Institute of Applied Physics Technische Universität Dresden 01062 Dresden Germany

3. Center of Excellence – Complexity and Topology in Quantum Matter ct.qmat TU Dresden 01062 Dresden Germany

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100023

Reference40 articles.

1. Ferroelectricity in hafnium oxide thin films

2. High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

3. Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles

4. A 30-nm thick integrated hafnium zirconium oxide nano-electro-mechanical membrane resonator

5. Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO2

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced remnant polarization in ferroelectric Hf0.5Zr0.5O2 thin film capacitors through Mo top electrode by post-metallization annealing treatment;Physica B: Condensed Matter;2024-07

2. Enhanced pyroelectric response at morphotropic and field-induced phase transitions in ferroelectric hafnium oxide thin films;APL Materials;2021-05-01

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