Near‐Unity External Quantum Efficiency in GaAs|AlGaAs Heterostructures Grown by Molecular Beam Epitaxy
Author:
Affiliation:
1. Department of Physics and Astronomy University of New Mexico Albuquerque NM 87106 USA
2. Crystalline Mirror Solutions GmbH Vienna Austria
Funder
Air Force Office of Scientific Research
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100106
Reference22 articles.
1. Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent
2. High external quantum efficiency from double heterostructure InGaP/GaAs layers as selective emitters for thermophotonic systems
3. Strong Internal and External Luminescence as Solar Cells Approach the Shockley–Queisser Limit
4. Optical refrigeration of GaAs: Theoretical study
5. Electroluminescent cooling in intracavity light emitters: modeling and experiments
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