High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot‐Wire Chemical Vapor Deposition on Diamond Substrates
Author:
Affiliation:
1. Institute for Physics of Microstructures Russian Academy of Sciences GSP-105 Nizhny Novgorod Russia
2. Lobachevski State University of Nizhny Novgorod 23 Gagarin Av. 603950 Nizhny Novgorod Russia
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100421
Reference22 articles.
1. 70 °C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge
2. Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding
3. High hole mobility tin-doped polycrystalline germanium layers formed on insulating substrates by low-temperature solid-phase crystallization
4. Large grain growth of Ge-rich Ge1−xSnx(x ≈ 0.02) on insulating surfaces using pulsed laser annealing in flowing water
5. High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
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1. Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing;Applied Surface Science;2024-06
2. A new route to fabricate high-quality double-side-polished freestanding diamond film;Vacuum;2023-12
3. High-electron mobility P-doped polycrystalline GeSn layers formed on insulators at low temperatures;Applied Physics Letters;2023-05-15
4. Interfacial Nucleation Control in Amorphous GeSn Thin Films Using Bilayer Structure;Crystal Growth & Design;2023-04-24
5. Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering;Crystals;2022-12-12
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