Two-dimensional beyond-silicon semiconductors and devices forpost-Moore integrated circuits-Reference-Cited by-同舟云学术

Two-dimensional beyond-silicon semiconductors and devices forpost-Moore integrated circuits

Published:2023-07-01 Issue: Volume: Page:
ISSN:0023-074X
Container-title:Chinese Science Bulletin
language:en
Short-container-title:Chin. Sci. Bull.

Author:

Zhang Yue

Publisher

Science China Press., Co. Ltd.

Subject

Multidisciplinary

Link

https://engine.scichina.com/doi/pdf/E72984CAD57A43D483B3E21365CA801D

Reference5 articles.

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2. Guo Q L, Gu T, Wang C, et al. Interfacial characterization of two-dimensional van der Waals devices by transmission electron microscopy (in Chinese). Chin Sci Bull, 2023, 68: 2873–2885 [郭泉林, 顾恬, 王悰, 等. 二维材料范德华器件中界面的透射电子显微表征. 科学通报, 2023, 68: 2873–2885].

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4. Wang J L, Hu J Y, Huan Y H, et al. Progress in the preparation and device research oftwo-dimensional metallic transition metal dichalcogenides for electrical contact applications (in Chinese). Chin Sci Bull, 2023, 68: 2886–2900 [王嘉龙, 胡静怡, 郇亚欢, 等.面向电极接触应用的二维金属性过渡金属硫属化合物的制备和器件研究进展. 科学通报, 2023, 68: 2886–2900].

5. Le Z K, Liu X, Li Y X, et al. Vertical transistors based on two-dimensional semiconductors (in Chinese). Chin Sci Bull, 2023, 68: 2901–2910 [乐志凯, 刘潇, 李运鑫, 等. 基于二维半导体的垂直晶体管. 科学通报, 2023, 68: 2901–2910].