Hybrid Magneto-electric FET-CMOS Integrated Memory Design for Instant-on Computing-Reference-Cited by-同舟云学术

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Hybrid Magneto-electric FET-CMOS Integrated Memory Design for Instant-on Computing

Published:2024-06-12 Issue: Volume:47 Page:770-775
ISSN:
Container-title:Proceedings of the Great Lakes Symposium on VLSI 2024
language:
Short-container-title:

Author:

Najafi Deniz¹^ORCID,Tabrizchi Sepehr²^ORCID,Zhou Ranyang³^ORCID,Amel Solouki Mohammadreza⁴^ORCID,Marshal Andrew⁵^ORCID,Roohi Arman⁶^ORCID,Angizi Shaahin³^ORCID

Affiliation:

1. ECE, New Jersey Institute of Technology, USA

2. School of Computing, University of Nebraska Lincoln, USA

3. New Jersey Institute of Technology, USA

4. Politecnico di Torino, Italy

5. The University of Texas at Dallas, USA

6. School of Computing, University of Nebraska - Lincoln, USA

Funder

NSF (National Science Foundation)

Publisher

ACM

Link

https://dl.acm.org/doi/pdf/10.1145/3649476.3660361

Reference33 articles.

1. 2011. NCSU EDA FreePDK45. http://www.eda.ncsu.edu/wiki/FreePDK45:Contents

2. Minhaz Abedin 2022. Mr-pipa: An integrated multilevel rram (hfo x)-based processing-in-pixel accelerator. IEEE JxCDC (2022), 59–67.

3. Optimization of VGG16 utilizing the Arithmetic Optimization Algorithm for early detection of Alzheimer’s disease

4. Comparative Analysis of AlexNet, ResNet18 and SqueezeNet with Diverse Modification and Arduous Implementation;Elahi H.;Arabian Journal for Science and Engineering,2021

5. Magnetoelectric hysteresis loops in Cr2O3at room temperature

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