Frequency-Dependent Dielectric Characterization of Bi1.75Pb0.25Sr2Ca2Cu3-xSnxO10+δ Glass Ceramics System

Abstract

In this study, Bi1.75Pb0.25Sr2Ca2Cu3-xSnxO10+δ glass ceramic structure; (x = 0.0, 0.3, 0.5) depending on Cu3-x-Snx displacement, frequency-dependent (100 Hz-2 MHz), capacitance-conductance measurements were taken at 75 K and 125 K temperature values. Dielectric constant reel part (ε'), imaginary dielectric constant (ε''), dielectric loss (tanδ) and ac electrical conductivity (σac) frequency dependence were analyzed using the capacitance–voltage (C–V) and conductance-voltage (G-V) measurements. Sn doping had a negative capacitive effect and a decrease in capacitive effect was observed with the addition of Sn doping rate. The observed negative capacitance effect is believed to arise from the polarization effect generated by the Sn dopant. The negative dielectric constant and the virtual negative dielectric constant were calculated from the negative capacitance values. While the undoped sample exhibits a positive capacitance characteristic, the addition of Sn dopant to the samples results in the observation of a negative capacitance property. At the same time, it was found that the dielectric properties of the samples were dependent on frequency and temperature.