Oxidation of Si3N4 in the Range 1300o to 1500oC-Reference-Cited by-同舟云学术

Oxidation of Si3N4 in the Range 1300o to 1500oC

Published:1976-09 Issue:9-10 Volume:59 Page:399-403
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J American Ceramic Society

Author:

TRIPP W. C.,GRAHAM H. C.

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1151-2916.1976.tb09505.x/fullpdf

Reference21 articles.

1. DENSE SILICON NITRIDE

2. Effect of Oxygen Impurities on the Nitridation of High-Purity Silicon

3. 4S. Wild, P. Grieveson, K. H. Jack, M. J. Latimer, and P. Popper ; pp.377 -84 inSpecial Ceramics 5 . British Ceramic Research Association, Stoke-on-Trent, 1972 .

4. STRUCTURAL ASPECTS OF SILICON NITRIDE

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