Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms-Reference-Cited by-同舟云学术

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Gapped Nearly Free-Standing Graphene on an SiC(0001) Substrate Induced by Manganese Atoms

Published:2018-09-30 Issue:5 Volume:27 Page:90-94
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Hwang Jinwoong¹,Lee Ji-Eun¹,Kang Minhee¹,Park Byeong-Gyu²,Denlinger Jonathan³,Mo Sung-Kwan³,Hwang Choongyu¹

Affiliation:

1. Department of Physics, Pusan National University, Busan 46241, Korea

2. Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 37673, Korea

3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Angle-resolved photoemission spectroscopy studies of electron-electron interactions in graphene;Current Applied Physics;2021-10

2. Formation of quasi-free-standing graphene on SiC(0001) through intercalation of erbium;AIP Advances;2021-02-01

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