Atomic Layer Etching of SiO<sub>2</sub> for Nanoscale Semiconductor Devices: A Review-Reference-Cited by-同舟云学术

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Atomic Layer Etching of SiO₂ for Nanoscale Semiconductor Devices: A Review

Published:2023-12-28 Issue:1 Volume:33 Page:1-6
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Hong Daeun¹^ORCID,Kim Yongjae²^ORCID,Chae Heeyeop¹²³^ORCID

Affiliation:

1. School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Publisher

The Korean Vacuum Society

Link

https://pdf.medrang.co.kr/ASCT/2024/033/ASCT033-01-1.pdf

Reference46 articles.

1. Ion‐surface interactions in plasma etching

2. Surface science aspects of etching reactions

3. A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

4. Plasma etching: Yesterday, today, and tomorrow

5. Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

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