Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer-Reference-Cited by-同舟云学术

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Enhanced performance of InGaN-based light emitting diodes through a special etch and regrown process in n-GaN layer

Published:2014-08-07 Issue:S5 Volume:22 Page:A1284
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Fu Binglei,Kang Junjie,Wei Tongbo,Liu Zhiqiang,Liu Zhe,Liu Naixin,Xiong Zhuo,Li Zhi,Wei Xuecheng,Lu Hongxi,Yi Xiaoyan,Li Jinmin,Wang Junxi

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference32 articles.

1. Prospects for LED lighting

2. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

3. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

4. Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop

5. Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template;Crystal Growth & Design;2023-04-20

2. High-quality nanodisk of InGaN/GaN MQWs fabricated by neutral-beam-etching and GaN regrowth: towards directional micro-LED in top-down structure;Semiconductor Science and Technology;2020-06-02

3. Carbon-nanotube-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diodes;Nanotechnology;2016-05-27

4. Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode;RSC Advances;2015

5. The Effects of Mg Back Diffusion Capping Layers on the Performance Enhancement of Blue Light Emitting Diodes With a p-InGaN Last Barrier;Journal of Display Technology;2015-01

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