Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes

Author:

Ding Yu1,Zhou Shenhui1,Zhuang ZheORCID,Sang Yimeng1,Yu Junchi1,Xu Feifan1,Huang Jinpeng1,Xu Weizong1ORCID,Tao Tao1,Zhi Ting2,Lu Hai1,Huang Kai3ORCID,Zhang Rong13,Liu Bin1

Affiliation:

1. Nanjing University

2. Nanjing University of Posts and Telecommunications

3. Xiamen University

Abstract

We proposed a “Ni sacrifice” method to fabricate Al-based highly reflective p-electrode in the ultraviolet spectral region for AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs). The “Ni sacrifice” p-electrode could have a high optical reflectivity of around 90% at the DUV spectral region below 300 nm. Compared to Ni/Au, indium tin oxide (ITO), and Pd p-contacts, the “Ni sacrifice” led to a higher resistivity of p-contacts and a slightly higher operated voltage of the DUV-LEDs (within 0.6 V at 20 mA). Although the electrical performance was degraded slightly, the light output power and external quantum efficiency of the DUV-LEDs could be improved by utilizing the “Ni sacrifice” p-electrode. Besides, we introduced a grid of vias in the device mesa and reduced the diameter of the vias to achieve an enhanced peak external quantum efficiency (EQE) up to 1.73%. And the wall-plug efficiency (WPE) of DUV-LEDs with a “Ni sacrifice” p-electrode was higher than that of Ni/Au p-electrode DUV-LEDs at low currents. These results highlight the great potential of the proposed “Ni sacrifice” reflective p-electrode for use in DUV-LEDs.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

The Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

Publisher

Optica Publishing Group

Subject

Atomic and Molecular Physics, and Optics

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