Watt-level output power and near-diffraction-limit beam quality mid-infrared Ho:GdVO4 self-Raman laser at 2.5 µm

Abstract

We demonstrate an efficient active Q-switched Ho:GdVO4 self-Raman laser at 2500 nm for the first time, to our knowledge. Using Ho:GdVO4 crystal as the gain medium for both the 2048nm fundamental laser and the 2500 nm Raman laser, the output performances of a new mid-infrared self-Raman laser were investigated. The maximum average output power of 1.45 W was achieved at an incident pump power of 22.5 W, with a slope efficiency of 25.8%, for an output transmittance of 30% and a pulse repetition frequency of 15 kHz. The maximum single pulse energy of 96.7 µJ with a pulse width of 11.35 ns was obtained, corresponding to the peak power of 8.5 kW. The beam quality was near diffraction limited with the M2 factors of 1.15 and 1.06 along the x and y directions. Moreover, adopting the two-end output way of the fundamental laser and the Raman laser, the Raman gain coefficient of Ho:GdVO4 crystal was estimated to be 1.14 cm/GW at 2048nm. This work shows that Ho:GdVO4 is an excellent self-Raman laser crystal for the generation of high power Raman laser at 2.5 µm.