Synthesis and characterization of InP/ZnSe/ZnS quantum dots for photo-emissive color conversion

Abstract

In this paper, a InP/ZnSe/ZnS quantum dots photoresist (QDPR) film has been successfully prepared after the as-synthesized InP/ZnSe/ZnS quantum dots (QDs) were mixed with the photoresist, where the molar ratio of P3- : In3+: Se2- was 6:1:3 and the reaction time the ZnS shell was 60 min. The influence of the thickness of the film and the mass ratio of InP/ZnS QDs to photoresist on the photoluminescence quantum yield (PLQY) was investigated. The results show that the PLQY changes from 39.9% to 52.6% and the CIE color coordinates could vary from (0.28, 0. 10) to (0.65, 0.32) with the assistance of 5.5 pairs of DBR structures when the thickness of the InP/ZnSe/ZnS QDPR films is 7.82 µm and the mass ratio (wt%) of the InP/ZnSe/ZnS QDs to the photoresist is 25%. Compared with the InP/ZnSe/ZnS QDs film, the PLQY of the patterned InP/ZnSe/ZnS QDs layer can reach to be 47.2% and the CIE color coordinates of is varied from (0.28, 0.10) to (0.35, 0.14). Furthermore, the PLQY of the patterned InP/ZnSe/ZnS QDs layer can be improved to 65.1% at 5.5 pairs of DBR structures. Based on these results, the InP/ZnSe/ZnS QDs films, especially patterned QD layer, show great potential for the fabrication of high-quality QD color filter and full-color displays.