Affiliation:
1. Indian Institute of Science
Abstract
We report the optimization methodology of sputter-deposited lead zirconium titanate (PZT) on a silicon-on-insulator platform for photonic applications. A crack-free PZT film is obtained for a 3.6°C/min ramp rate, 550°C annealing temperature, and a surface roughness of ≈2nm, ≈5nm, and ≈10nm for PZT grown on MgO, Pt, and TiO2 buffers, respectively. The coercive field for PZT/MgO and PZT/Pt film is 50 kV/cm and 30 kV/cm, respectively. A waveguide loss of 6.5 dB/mm is obtained for PZT-on-silicon (Si) waveguides. An electro-optic device using an Si microring resonator with optimized PZT/MgO is demonstrated with electro-optic response and coercive field of 14 pm/V and 50 kV/cm, respectively.
Funder
Professor Ramakrishna Rao chair fellowship
Ministry of Education, India
Subject
Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics
Cited by
4 articles.
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