Abstract
A fast-switching TiO2/SnO2 heterostructure thin-film (TF)
photodetector synthesized by electron beam evaporation technique is
analyzed in this study. The substrate utilized is n-type silicon (Si),
while gold (Au) is employed as the top electrode. To assess sample
morphology and confirm elemental composition, field emission scanning
electron microscopy (FESEM), energy dispersive x-ray spectroscopy
(EDS), and chemical mapping were conducted. Structural characteristics
were determined using X-ray diffraction (XRD) analysis. The XRD
analysis confirmed the presence of various phases of TiO2 (anatase and rutile) and SnO2 (rutile). UV-Vis spectroscopy
revealed multiple absorption peaks, at 447 nm, 495 nm,
560 nm, and 673 nm, within the visible spectrum. The
device demonstrates high detectivity (D∗) of 1.737×109 Jones and a low noise equivalent
power (NEP) of 0.765×10−10W. Evaluation of the device’s switching
response through current-time characteristic (I-T) analysis indicates
rapid switching with a rise time and fall time of 0.33 s and
0.36 s, respectively.
Funder
Science and Engineering Research Board