High-performance multi-junction cascade 1.3 µm quantum dot vertical cavity surface-emitting laser

Author:

Ping Song,Bo Xue Yu,Liang Dong Hai1ORCID,Gang Jia Zhi,Wei Jia12,Jian Liang2,Yong Wang Zhi3,She Xu Bing14

Affiliation:

1. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

2. Taiyuan University of Technology

3. Beijing University of Technology

4. Shaanxi University of Science & Technology

Abstract

A high-performance 5-junction cascade quantum dot (QD) vertical cavity surface-emitting laser (VCSEL) with 1.3 µm wavelength was designed. The characteristics of the QD as active regions and tunnel junctions are combined to effectively increase output power. The photoelectric characteristics of single-junction, 3-junction cascade, and 5-junction cascade QD VCSELs are compared at continuous-wave conditions. Results indicate that the threshold current gradually decreases, and the output power and slope efficiency exponential increase with the increase of the number of active regions. The peak power conversion efficiency of 58.4% is achieved for the 5-junction cascade individual QD VCSEL emitter with 10 µm oxide aperture. The maximum slope efficiency of the device is 6.27 W/A, which is approximately six times than that of the single-junction QD VCSEL. The output power of the 5-junction cascade QD VCSEL reaches 188.13 mW at injection current 30 mA. High-performance multi-junction cascade 1.3-µm QD VCSEL provides data and theoretical support for the preparation of epitaxial materials.

Funder

National Natural Science Foundation of China

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

Publisher

Optica Publishing Group

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