Abstract
This article reports a novel design of a compact tunable resonance filter with a highly extinguished and ultra-broad out-of-band rejection for on-chip amplified spontaneous noise suppression from pump lasers highly demanding for generating pure/entangled photon pairs via χ(3) process in a CMOS compatible silicon photonics technology platform. The proposed device is designed with two identically apodized distributed grating structures for guided Fabry-Perot resonant transmissions in a silicon-on-insulator rib waveguide structure. The device design parameters are optimized by theoretical simulation for a low insertion loss singly-resonant transmission peak at a desired wavelength. We observed that a device length of as low as ∼ 35 µm exhibits a rejection band as large as ∼ 60 nm with an extinction of ∼ 40 dB with respect to the resonant wavelength peak at λ
r
∼ 1550 nm (FWHM ∼ 80 pm, IL ∼ 2 dB). The experimental results have been shown to be closely matching to our theoretical simulation and modeling results in terms of its stop bandwidth and resonance wavelength for noise suppressed pump laser wavelength filtering. As expected from the theoretical prediction, the trend pertaining to the trade-off between passive insertion loss and Q-value of the resonances has been observed depending on the device parameters. The thermo-optic tuning characteristics of resonant wavelengths have been obtained by integrating microheaters. The resonance peak could be tuned at a rate of 96 pm per mW of consumed thermal power. Noise associated with an amplified pump wavelength (λ
P
∼ 1550 nm) has been shown to be suppressed (∼ 40-dB), up to the detector noise floor.