A 340-nm-band ultraviolet laser diode composed of GaN well layers
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference23 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
3. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240nm) AlGaN multiple-quantum-well lasers
4. Room-Temperature Stimulated Emission from AlN at 214 nm
5. Pseudomorphically Grown Ultraviolet C Photopumped Lasers on Bulk AlN Substrates
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1. Improving temperature characteristics of GaN-based ultraviolet laser diodes by using InGaN/AlGaN quantum wells;Optics Letters;2024-02-28
2. GaN based ultraviolet laser diodes;Journal of Semiconductors;2024-01-01
3. Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers;Applied Physics B;2023-08-23
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5. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode;Journal of Semiconductors;2022-01-01
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