Affiliation:
1. STMicroelectronics
2. Université de Lyon, Institut des Nanotechnologies de Lyon
3. Université de Lyon, Institut Lumière Matière
4. Université de Sherbrooke – 3IT
Abstract
This work presents a “half-etch” horizontal slot waveguide design based on SiN, where only the upper SiN layer is etched to form a strip that confines the mode laterally. The numerical modeling, fabrication, and characterization of passive waveguiding components are described. This novel slot waveguide structure was designed with on-chip light amplification in mind, for example with an Er-doped oxide spacer layer. Proof-of-concept racetrack resonators were fabricated and characterized, showing quality factors up to 50,000 at critical coupling and residual losses of 4 dB/cm at wavelengths away from the N-H bond absorption peak in SiN, demonstrating the high potential of these horizontal slot waveguides for use in active integrated photonics.
Funder
This work was supported by a European IPCEI program
Subject
Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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