Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection-Reference-Cited by-同舟云学术

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Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection

Published:2015-05-15 Issue:10 Volume:40 Page:2401
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Kuo Ming-Hao,Lai Wei-Ting,Lee Sheng-Wei,Chen Yen-Chun,Chang Chia-Wei,Chang Wen-Hao,Hsu Tzu-Min,Li Pei-Wen

Funder

Ministry of Science and Technology, Taiwan

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference20 articles.

1. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

2. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

3. Thin-film Si1−xGex HIT solar cells

4. Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

5. Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of the Preparation and Structures of Si Nanowires, Ge Quantum Dots and Their Composites;Nano;2019-04

2. Anisotropy of Seebeck coefficient in Si/Ge composite quantum dots;Applied Physics Letters;2016-08-22

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