Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes
Author:
Funder
King Abdullah University of Science and Technology
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference42 articles.
1. Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency
2. The emergence and prospects of deep-ultraviolet light-emitting diode technologies
3. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp
4. Controlled bunching approach for achieving high efficiency active region in AlGaN-based deep ultraviolet light-emitting devices with dual-band emission
5. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate
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