Ag and Ge dual-cation substitution in CuSnS induced improvement of power conversion efficiency-Reference-Cited by-同舟云学术

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Ag and Ge dual-cation substitution in CuSnS induced improvement of power conversion efficiency

Published:2024-06 Issue: Volume:152 Page:115505
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Zhang Ying,Liu Xin,Zhao Yonggang,Zhou Zhineng,Chen Yufei,Xu Congyan,Hu Xinghuan,Su Xu,Wu Lang,Jin Xiaoyu,Wang Shurong

Publisher

Elsevier BV

Reference28 articles.

1. Cu2SnS3 based solar cell with 3% efficiency;Chierchia;Phys. Status Solidi C,2016

2. A study of ternary Cu2SnS3 and Cu3SnS4 thin films prepared by sulfurizing stacked metal precursors;Fernandes;J. Phys. D Appl. Phys.,2010

3. Fabrication of highly crystallized Cu2SnS3 thin films through sulfurization of Sn-rich metallic precursors;Zhang;J. Alloys Compd.,2014

4. Cu2SnS3 and Cu4SnS4 thin films via chemical deposition for photovoltaic application;Avellaneda;J. Electrochem. Soc.,2010

5. Cu2Sn1− xGexS3 solar cells fabricated with a graded bandgap structure;Umehara;Appl. Phys. Express,2016

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