Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing-Reference-Cited by-同舟云学术

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Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing

Published:2024-03 Issue: Volume:149 Page:115075
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Pavelescu E.-M.,Ticoş D.,Ligor O.,Romaniţan C.,Matei A.,Comănescu F.,Ţucureanu V.,Spânulescu S.I.^ORCID,Ticoş C.^ORCID,Ohshima T.,Nakamura T.,Imaizumi M.,Goldman R.S.^ORCID,Wakahara A.,Yamane K.

Funder

Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii

Ministerul Cercetării, Inovării şi Digitalizării

Publisher

Elsevier BV

Reference25 articles.

1. Operation of monolithically-integrated digital circuits with light emitting diodes fabricated in lattice-matched Si/III–V–N/Si heterostructure;Yamane;Appl. Phys. Express,2010

3. Electronic band structure of GaNxPyAs1−x−y highly mismatched alloys: suitability for intermediate-band solar cells;Kudrawiec;Phys. Rev. Appl.,2014

4. Doping control of GaAsPN alloys by molecular beam epitaxy for monolithic III-V/Si tandem solar cells;Yamane;J. Cryst. Growth,2017

5. Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation;Pavelescu;Semicond. Sci. Technol.,2013

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