Optical properties and band-gap engineering of group (I) element-doped ZnO nanoparticles as P-type semiconductors-Reference-Cited by-同舟云学术

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Optical properties and band-gap engineering of group (I) element-doped ZnO nanoparticles as P-type semiconductors

Published:2024-06 Issue: Volume:152 Page:115434
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Khorsand Zak Ali^ORCID,Hashim Abdul Manaf

Publisher

Elsevier BV

Reference42 articles.

1. Degradation of transparent conductive oxides: interfacial engineering and mechanistic insights;Mirletz;Sol. Energy Mater. Sol. Cell.,2015

2. Effect of calcination temperature on performance of ZnO nanoparticles for dye-sensitized solar cells;Golsheikh;Powder Technol.,2018

3. High performance CO gas sensor based on ZnO nanoparticles;Hjiri;J. Inorg. Organomet. Polym. Mater.,2020

4. Effect of pH on the growth and ibuprofen photocatalytic response of Zn1 − xCoxO compound synthesized by the co-precipitation method;Soares;J. Mater. Res.,2023

5. Nanotubes/nanorods-like structures of La-doped ZnO for degradation of methylene blue and ciprofloxacin;Soares;J. Photochem. Photobiol. Chem.,2024

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