Electrical and optical properties of bismuth sulphotelluride [Bi2(S1−xTex)3] thin films prepared by arrested precipitation technique (APT)
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Growth of (Bil−xSbx)2Te3 thin films by metal-organic chemical vapour deposition
2. The dip-dry technique for preparing photosensitive Sb2S3 films
3. Secondary ion mass spectrometry of n-type (Bi2Te3) × (Bi2Se3)1−x thermoelectric semiconductor
4. Electronic transport properties of the flash-evaporated p-type Bi0.5Sb1.5Te3 thermoelectric thin films
5. Growth of Bi2S3 film using a solution-gas interface technique
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