Pressure and atomic size effects of IV cation on mechanical and electronic properties of Zn-IV-N2 (IV Si, Ge and Sn): First principles calculation
-
Published:2024-09
Issue:
Volume:40
Page:e00936
-
ISSN:2352-2143
-
Container-title:Computational Condensed Matter
-
language:en
-
Short-container-title:Computational Condensed Matter
Author:
Boonkhuang Apiwat,
Kongnok Thanundon,
Meethan Weerachon,
Busayaporn Wutthikrai,
Phacheerak Kanoknan,
Klinkla Rakchat,
Sailuam WutthigraiORCID
Reference51 articles.
1. Band gap-tunable (Mg, Zn)SnN2.Earth-abundant alloys with a wurtzite structure;Yamada;ACS Appl. Electron. Mater.,2021
2. RF-sputter deposition of Zn-Ge nitride thin films;Kikawa;Solid State Commun.,1999
3. First-principles study of phonons and related ground-state properties and spectra in Zn-IV-N2 compounds;Paudel;Phys. Rev. B,2008
4. Synthesis, lattice structure, and band gap of ZnSnN2;Quayle;MRS Commun.,2013
5. F Kawamura, N. Yamada, X. Cao, M. Lmai, and T. Taniguchi. The bandgap of ZnSnN2 with a disordered-wurtzite structure. Jpn. J. Appl. Phys. 58 SC1034. https://doi.org/10.7567/1347-4065/ab0ace.