Pressure-induced phase transition in defect Chalcopyrites HgAl2Se4 and CdAl2S4
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference21 articles.
1. Radiative Transition with Visible Light in Electrochemical Anodized Polycrystalline Silicon
2. Ordered-vacancy-compound semiconductors: PseudocubicCdIn2Se4
3. Impurity optical absorption ofHgGa2Se4:Co2+single crystals
4. Optical properties of undoped, Co2+- and Er3+-doped CdAl2Se4 single crystals
5. Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4
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1. Insights into the optoelectronic and thermoelectric properties of defect chalcopyrites XAl2Se4 (X = Zn, Cd, and Hg): A density functional theory approach;Physica B: Condensed Matter;2024-10
2. Electronic, elastic and optical properties of ZnAl2Te4 semiconductor under isotropic pressures via first-principles calculations;Chemical Papers;2022-07-25
3. High-Pressure Synthesis of β- and α-In2Se3-Like Structures in Ga2S3;Chemistry of Materials;2022-06-21
4. First-principles calculations of optoelectronic and thermoelectric properties of HgGa2S4 chalcopyrite under pressure effect;Materials Science and Engineering: B;2021-10
5. Electronic and elastic properties of AIIB2IIIC4VI defect-chalcopyrite semiconductors;International Journal of Modern Physics B;2019-11-10
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