First-principles study of phase transition, electronic, elastic and optical properties of defect chalcopyrite ZnGa 2 Te 4 semiconductor under different pressures-Reference-Cited by-同舟云学术

First-principles study of phase transition, electronic, elastic and optical properties of defect chalcopyrite ZnGa 2 Te 4 semiconductor under different pressures

Published:2018-08 Issue: Volume:119 Page:193-201
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Mayengbam Rishikanta,Tripathy S.K.,Palai G.,Dhar S.S.

Funder

SERB, New Delhi

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference63 articles.

1. Raman scattering study of pressure-induced phase transitions in AIIB2IIIC4VI defect chalcopyrites and spinels

2. Dispersion of the second harmonic generation from CdGa2X4 (X=S, Se) defect chalcopyrite: DFT calculations

3. Structural characterization and novel optical properties of defect chalcopyrite ZnGa2Te4 thin films

4. Optical absorption and emission in the defect-chalcopyrite semiconductor CdGa2Te4

5. A study of the optical and thermal properties of nonlinear mercury thiogallate crystals

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