Predicting the bandgap energy of distorted GaSbxAs1-x and InSbxAs1-x using design of experiment (DoE) and artificial intelligence (AI): A comparative study-Reference-Cited by-同舟云学术

Predicting the bandgap energy of distorted GaSbxAs1-x and InSbxAs1-x using design of experiment (DoE) and artificial intelligence (AI): A comparative study

Published:2023-04 Issue: Volume:175 Page:111180
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Tarbi A.,Chtouki T.,Sellam M.A.,Elkouari Y.,Erguig H.,Migalska-Zalas A.^ORCID

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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4. Temperature dependence of diffusion length and mobility in mid-wavelength InAs/InAsSb superlattice infrared detectors;Soibel;Appl. Phys. Lett.,2020

5. Molecular‐beam deposition of polycrystalline GaSbAs thin films at a low substrate temperature of 300° C;Okuzako;Phys. Status Solidi C,2011

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