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Ion-beam-induced annealing effects in GaAs

  • Published:1980-01 Issue:1-3 Volume:168 Page:307-312
  • ISSN:0029-554X
  • Container-title:Nuclear Instruments and Methods
  • language:en
  • Short-container-title:Nuclear Instruments and Methods

Author:

Williams J.S.,Austin M.W.

Publisher

Elsevier BV

Subject

General Medicine

Reference11 articles.

1. Ion implantation in semiconductors;Mayer,1970

2. Thin films - Interdiffusion and reactions;Lau,1978

3. Disorder annealing in III–V semiconductors after ion implantation at low temperatures

4. Ion implantation;Carter,1971

5. Reordering of implanted amorphous layers in gaas

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1. Recovery and accumulation of ion irradiation damage leading to dose rate dependence in GaAs;Japanese Journal of Applied Physics;2020-08-27

2. Thermally induced amorphous to crystalline transformation of argon ion bombarded GaAs studied with surface Brillouin and Raman scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09

3. Damage evolution and amorphization in semiconductors under ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-04

4. Influence of electronic stopping on amorphization energies;Surface and Coatings Technology;2007-08

5. Distribution of radiation induced defects and modification of optical constants of GaAs implanted with high energy 56Fe ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-11
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