A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics-Reference-Cited by-同舟云学术

A novel high-performance junctionless 4H-SiC trench MOSFET with improved switching characteristics

Published:2023-05 Issue: Volume:277 Page:112011
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zerroumda B.,Ferhati H.,Djeffal F.,Benaggoune S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

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3. A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study;Vaid;Microelectron. Eng.,2011

4. 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect;Fu;Microelectron. Reliab.,2021

5. A review on power electronics technologies for power quality improvement;Afonso;Energies,2021

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