Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology-Reference-Cited by-同舟云学术

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Titanium–aluminum oxynitride (TAON) as high-k gate dielectric for sub-32 nm CMOS technology

Published:2010-03 Issue:3 Volume:87 Page:267-270
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Miyoshi J.,Diniz J.A.,Barros A.D.,Doi I.,Zuben A.A.G. Von

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Hybrid titanium–aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal–oxide–semiconductor devices

2. Characteristics of Al[sub x]Ti[sub 1−x]O[sub y] Films Grown by Plasma-Enhanced Atomic Layer Deposition

3. Thermal stability and electrical properties of titanium-aluminum oxide ultrathin films as high-k gate dielectric materials

4. High-κ gate dielectrics: Current status and materials properties considerations

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Accurate Model of Threshold Voltage and Effect of High-K Material for Fully Depleted Graded Channel DMDG MOSFET;Silicon;2022-02-07

2. TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology;Microelectronic Engineering;2012-04

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