ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems-Reference-Cited by-同舟云学术

ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems

Published:2011-05 Issue:5 Volume:88 Page:684-689
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Waechtler Thomas,Ding Shao-Feng,Hofmann Lutz,Mothes Robert,Xie Qi,Oswald Steffen,Detavernier Christophe,Schulz Stefan E.,Qu Xin-Ping,Lang Heinrich,Gessner Thomas

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. J. Forster, Advanced Metallization Conference 2009 (AMC 2009), Baltimore, MD (USA), 13–15 October 2009.

2. ITRS – The International Technology Roadmap for Semiconductors. .

3. Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO[sub 2]

4. New precursors for CVD copper metallization

5. Reduction of Copper Oxide Film to Elemental Copper

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