Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)-Reference-Cited by-同舟云学术

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Published:2024-01 Issue: Volume:283 Page:112103
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Galizia Bruno,Fiorenza Patrick,Bongiorno Corrado,Pécz Béla,Fogarassy Zsolt,Schilirò Emanuela,Giannazzo Filippo,Roccaforte Fabrizio,Nigro Raffaella Lo

Funder

European Commission

Magyar Tudományos Akadémia

Consiglio Nazionale delle Ricerche

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

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5. Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices;Lo Nigro;Materials,2022

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1. Effects of gallium surfactant on AlN thin films by microwave plasma chemical vapor deposition;Journal of Semiconductors;2024-09-01

2. Towards aluminum oxide/aluminum nitride insulating stacks on 4H–SiC by atomic layer deposition;Materials Science in Semiconductor Processing;2024-05