Removal rate and surface quality of the GLSI silicon substrate during the CMP process

Author:

Hong Jiao,Niu Xinhuan,Liu Yuling,Wang Chenwei,Zhang Baoguo,Sun Ming,Wang Juan,Han Liying,Zhang Wenqian

Funder

Major National Science and Technology Special Projects

Natural Science Foundation of China

Education-funded research projects of Hebei Province, China

Natural Science Foundation of Hebei Province, China

Natural Science Foundation of Tianjin, China

Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology, China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates[J];Rodriguez;J. Cryst. Growth,2016

2. Characterizations of zinc oxide nanorods incorporating a graphene layer as antibacterial nanocomposites on silicon substrates [J];Chen;Ceram. Int.,2016

3. Effect of nitridation surface treatment on silicon (111) substrate for the growth of high quality single-crystalline GaN hetero-epitaxy layer by MOCVD [J];Abd;Appl. Surf. Sci.,2016

4. The study on CMP slurry of titaium nitride barrier[J];Shou-mei;Electronic Design Engineering,2011

5. Effect of surfactant and electrolyte on surface modification of c-plane GaN substrate using chemical mechanical planarization (CMP) process[J];Asghar;Colloids and Surfaces,2016

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