Influence of tantalum/tantalum nitride barriers and caps on the high-temperature properties of copper metallization for wide-band gap applications-Reference-Cited by-同舟云学术

Influence of tantalum/tantalum nitride barriers and caps on the high-temperature properties of copper metallization for wide-band gap applications

Published:2015-04 Issue: Volume:137 Page:37-42
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Mardani Shabnam,Norström Hans,Smith Ulf,Olsson Jörgen,Zhang Shi-Li

Funder

Swedish Research Council

Swedish Foundation for Strategic Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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