Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test-Reference-Cited by-同舟云学术

Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test

Published:2017-09 Issue: Volume:76-77 Page:539-543
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Song S.,Munk-Nielsen S.,Uhrenfeldt C.

Funder

Danish Council for Strategic Research

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

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4. AEC-Q101 Failure mechanism based stress test qualification for discrete semiconductors in automotive applications (Rev. D1). 2013.

5. Impact of electrochemical process on the degradation mechanism of AlGaN/GaN HEMT;Gao,2014

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