Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location-Reference-Cited by-同舟云学术

Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location

Published:2018-12 Issue: Volume:91 Page:262-268
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Yapabandara Kosala^ORCID,Mirkhani Vahid,Wang Shiqiang,Khanal Min P.,Uprety Sunil,Isaacs-Smith Tamara,Hamilton Michael C.,Park Minseo

Funder

Vincent Salva

Walter Professorship

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference34 articles.

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3. Production and annealing of electron irradiation damage in ZnO;Look;Appl. Phys. Lett.,1999

4. Displacement thresholds in ZnO;Locker;IEEE Trans. Nucl. Sci.,1972

5. Handbook on Semiconductors;Van Vechten,1980

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