Author:
Stellari Franco,Wu Ernest Y.,Ocola Leonidas E.,Ando Takashi,Song Peilin
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics);Wu;JapanJ. Appl. Phys.,2019
2. Facts and myths of dielectric breakdown processes – part I: statistics, experimental, and physical acceleration models;Wu;IEEE Trans. Electron Dev.,2019
3. Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-k dielectric based resistive random-access memory;Wu;Appl. Phys. Lett.,2011
4. Nanoscale characterization of resistive switching using advanced conductive atomic microscopy-based setups;Lanza;J. Electroceram.,2017
5. Scalability of valence change memory: from devices to tipc-induced filaments;Celano;AIP Advance,2016