FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects-Reference-Cited by-同舟云学术

FDSOI and Bulk CMOS SRAM Cell Resilience to Radiation Effects

Published:2016-09 Issue: Volume:64 Page:152-157
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Calienes Bartra W.E.^ORCID,Vladimirescu A.,Reis R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Bulk and FDSOI Sub-micron CMOS Transistors Resilience to Single-Event Transients;Calienes Bartra,2015

2. Impact of Voltage Scaling on Nanoscale SRAM Reliability;Chandra,2009

3. SET and SEU Simulation Toolkit for LabVIEW;Calienes Bartra,2011

4. Fully-Gated Ground 10T-SRAM Bitcell in 45nm SOI Technology;Song,2010

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2. Impact of Back-Gate Radiation on Single-Event Effects of Ultrathin Body and Buried Oxide Fully Depleted Silicon-on-Insulator MOSFETs;Journal of Electronic Materials;2023-08-30

3. A Detailed Electrical Analysis of SEE on 28 nm FDSOI SRAM Architectures;2023 36th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI);2023-08-28

4. Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect;Micromachines;2023-08-17

5. Electrical and Electronic Properties of Magnesium/Molybdenum Disulfide Heterojunction Field Effect Transistors: A Theoretical Study;Science of Advanced Materials;2023-07-01