Electromigration behavior in Cu/Ni–P/Sn–Cu based joint system with low current density-Reference-Cited by-同舟云学术

Electromigration behavior in Cu/Ni–P/Sn–Cu based joint system with low current density

Published:2015-12 Issue:12 Volume:55 Page:2554-2559
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Kadoguchi Takuya,Gotou Keisuke,Yamanaka Kimihiro,Nagao Shijo,Suganuma Katsuaki

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Electromigration — a brief survey and some recent results;Black;IEEE Trans. Electron Devices,1969

2. Physics of electromigration;Black,1974

3. Electromigration in Metals;Huntington,1975

4. Electromigration in thin aluminium films on titanium nitride;Blech;J. Appl. Phys.,1975

5. Electromigration of Al–Si alloy films;Black,1978

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