Author:
Xiang Meiju,Wang Duowei,He Mu,Rui Guo,Ma Yao,Zhu Xuhao,Mei Fan,Gong Min,Li Yun,Huang Mingmin,Yang Zhimei
Funder
Natural Science Foundation of Sichuan Province
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference19 articles.
1. Wide and narrow bandgap semiconductors for power electronics: a new valuation;Hudgins;J. Electron. Mater.,2003
2. Electrical characterization of defects introduced during electron beam deposition of W schottky contacts on n-type 4H-SiC[J];Omotoso;Mater. Sci. Semicond. Process.,2016
3. Measurements and simulations of charge collection efficiency of p+/n junction SiC detectors[J];Moscatelli;Nucl. Inst. Methods Phys. Res. A,2005
4. Radiation damage in 4H-SiC and its effect on power device characteristics[C];Hazdra,2016
5. XTEM investigation of recovery on electrical degradation of 4H-SiC schottky barrier diode by swift heavy 209Bi ions irradiation[J];Yang;Nucl. Instrum. Methods Phys. Res., Sect. B,2017
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