Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates-Reference-Cited by-同舟云学术

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Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates

Published:2012-01 Issue:1 Volume:52 Page:112-117
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Das P.S.,Biswas Abhijit

Publisher

Elsevier BV

Reference38 articles.

1. Beyond the conventional transistor

2. High-κ gate dielectrics: Current status and materials properties considerations

3. High dielectric constant oxides

4. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

5. Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates

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1. Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor;2025

2. Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor;2024

3. Evolution of Charge Carrier Trapping and Impelling Current Conduction Mechanism with Temperature in Znga2o4/N-Srtio3 Mos Capacitor;2024

4. The origin of constant phase element in equivalent circuit of MIS (n) GaAs structures;Journal of Materials Science: Materials in Electronics;2020-09-23

5. Improved interfacial properties of GaAs MOS capacitor with NH₃-plasma-treated ZnON as interfacial passivation layer;Journal of Semiconductors;2017-09

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