Wafer-level Cu–Cu bonding technology

Author:

Tang Ya-Sheng,Chang Yao-Jen,Chen Kuan-Neng

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Reif Rafael, Fan Andy, Chen Kuan-Neng, Das Shamik. Fabrication technologies for three-dimensional integrated circuits. In: Proceedings of the international symposium on quality electronic design (ISQED); 2002. p. 33.

2. Copper wafer bonding;Fan;Electrochem Solid-State Lett,1999

3. McMahon JJ, Lu J-Q, Gutmann RJ. Wafer bonding of damascene-patterned metal/adhesive redistribution layers for via-first three-dimensional (3D) interconnect. In: Proceedings of electron components and technology (ECTC); 2005. p. 331–6.

4. Room temperature Cu–Cu direct bonding using surface activated bonding method;Kim;J Vac Sci Technol A,2003

5. Room temperature ultra-fine pitch and low-profiled Cu electrodes for bumpless interconnect;Shigetou;Transducers,2003

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