Density, surface tension, and viscosity of liquid Si–Cr alloys and influence on temperature and fluid flow during solution growth of SiC

Author:

Daikoku Hironori,Kawanishi Sakiko,Ishikawa Takehiko,Yoshikawa Takeshi

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Materials Science,Atomic and Molecular Physics, and Optics

Reference41 articles.

1. SiC—emerging power device technology for next-generation electrically powered environmentally friendly vehicles;Hamada;IEEE Trans. Electron Devices,2015

2. Fundamentals of Silicon Carbide Technology;Kimoto,2014

3. Silicon carbide liquid phase epitaxy in the Si-Sc-C system;Yakimova;Inst. Phys. Conf. Ser.,1996

4. K. Danno, T. Shirai, A. Seki, Solution growth on 4H-SiC(1-100) for lowering density of threading dislocations. Abstract book at 15th International Conference on Defects Recognition, Imaging and Physics in Semiconductors, Warsaw (2013) 58-59.

5. Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method;Yamamoto;Appl. Phys. Express,2014

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