Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer-Reference-Cited by-同舟云学术

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Bonding mechanisms and electrical properties of Ge/Si and Si/Si bonded wafers achieved by thin microcrystalline Ge interlayer

Published:2023-11 Issue: Volume:965 Page:171485
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Huang Yuan,Ke Shaoying,Chai Jianfei,Tan Chuhui,Wang Rongfei,Yang Jie,Lin Feng,Wang Chong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference36 articles.

1. 48 GHz high-performance Ge-on-SOI photodetector with zero-bias 40 Gbps grown by selective epitaxial growth;Liu;J. Light. Technol.,2017

2. High quality Ge growth on Si (111) and Si (110) by using reduced pressure chemical vapor deposition;Yamamoto;ECS Trans.,2022

3. Influence of annealing conditions on threading dislocation density in Ge deposited on Si by reduced pressure chemical vapor deposition;Yamamoto;Semicond. Sci. Technol.,2018

4. C. Li, Xue, C., Guo, X., Liu, Z., Research of High Performance Ge/Si Avalanche Photodiodes for Single-Photon Detection., 2014 Asia Communications and Photonics Conference (ACP), (2014) 1–3. https://10.1364/ACPC.2014.ATH3A.48.

5. High-performance Ge-on-Si photodetectors;Michel;Nat. Photonics,2010

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