Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2−x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment-Reference-Cited by-同舟云学术

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Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2−x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment

Published:2023-08 Issue: Volume:951 Page:169858
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Han Jimin^ORCID,Jeong Boyoung^ORCID,Sahu Dwipak Prasad,Kim Hyun-Mi,Yoon Tae-Sik^ORCID

Funder

National Research Foundation of Korea

Samsung

Ministry of Science, ICT and Future Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference32 articles.

1. Architecture and process integration overview of 3D NAND flash technologies;Lee;Appl. Sci.,2021

2. 3D Flash memories;Micheloni,2016

3. Effect of charge trap layer thickness on the charge spreading behavior within a few seconds in 3D charge trap flash memory;Choi;Sci. Technol.,2018

4. Introduction to flash memory;Bez;Proc. Ieee.,2003

5. K. Parat, A. Goda, Scaling Trends in NAND Flash, IEEE International Electron Devices Meeting (IEDM) (2018) 2.1.1–2.1.4.36.

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