Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching-Reference-Cited by-同舟云学术

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Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

Published:2007-01 Issue:1-2 Volume:428 Page:312-315
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Yu N.S.,Guo L.W.,Chen H.,Xing Z.G.,Ge B.H.,Wang J.,Zhu X.L.,Peng M.Z.,Yan J.F.,Jia H.Q.,Zhou J.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference22 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer

4. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

5. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate;ECS Journal of Solid State Science and Technology;2014-11-22

2. Low-temperature ECR-PEMOCVD deposition of high-quality crystalline gallium nitride films: A comparative study of intermediate layers for growth on amorphous glass substrates;Materials Science in Semiconductor Processing;2014-10

3. Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate;Materials Letters;2014-03

4. Low-temperature growth of high c-orientated crystalline GaN films on amorphous Ni/glass substrates with ECR-PEMOCVD;Journal of Alloys and Compounds;2014-01

5. Study on GaN epilayer transferring to Cu substrate from sapphire substrate using Ga 2 O 3 sacrificial layer;SPIE Proceedings;2012-02-09

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