GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT-Reference-Cited by-同舟云学术

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GaN obtained on quartz substrates through the nitridation of GaAs films deposited via CSVT

Published:2021-12 Issue: Volume:887 Page:161469
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

García-Salgado G.,Cruz-Bueno J.J.,Ramírez-González F.S.,Gastellou E.,Nieto-Caballero F.G.,Rosendo-Andrés E.,Luna-López J.A.,Coyopol-Solís A.,Romano-Trujillo R.,Morales-Ruiz C.,Galeazzi-Isasmendi R.,López-Gayou V.,Severiano F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference31 articles.

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2. Progress in GaN-based quantum dots for optoelectronics applications;Arakawa;IEEE J. Sel. Top. Quantum Electron.,2002

3. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies;Morkoç;J. Appl. Phys.,1994

4. Innovative advances in LED technology;Yam;Microelectron. J.,2005

5. The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD;Li;Phys. B Condens. Matter,2007

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique;Crystals;2023-04-03

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